PHYSICS BASED CHARGE AND DRAIN CURRENT MODEL FOR AlGaN/GaN HEMT DEVICES
نویسندگان
چکیده
A simple Physics based drain current model of AlGaN/GaN High Electron Mobility Transistor model (HEMT) is developed. The Proposed is useful for fast and accurate circuit simulation and analysis of Microwave and DC Characteristics. This model includes Channel length modulation and Velocity Saturation effect. Derived model results are compared with 1μm gate Al0.50Ga0.50N/GaN HEMT structure and 0.12 μm gate Al0.25Ga0.75N/GaN HEMT structure experimental data. The predicted Drain current are 1.23A/mm for 0.12μm gate and 5.23A/mm for 1μm gate length, which are in good agreement with experimental data.
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